FM400TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)SymbolVDSSVGSSIDIDMIDAIS*1ISM*1PD*4PD*4TchTstgViso
——
Item
Drain-source voltageGate-source voltageDrain currentAvalanche currentSource current
Maximum power dissipationChannel temperatureStorage temperatureIsolation voltageMounting torqueWeight
Conditions
G-S ShortD-S ShortTC’ = 130°C*3Pulse*2L = 10µH Pulse*2Pulse*2TC = 25°CTC’ = 25°C*3Ratings100±20200400200200400650880–40 ~ +150–40 ~ +12525003.5 ~ 4.53.5 ~ 4.5600
UnitVVAAAAAWW°C°CVN • mN • mgMain terminal to base plate, AC 1 min.Main Terminal M6Mounting M6Typical value
ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)
SymbolIDSSVGS(th)IGSSrDS(ON)(chip)VDS(ON)(chip)R(lead)CissCossCrssQGtd(on)tr
td(off)tftrr*1Qrr*1VSD*1Rth(ch-c)Rth(ch-c’)Rth(c-f)Rth(c’-f’)
Item
Drain cutoff current
Gate-source threshold voltageGate leakage currentStatic drain-sourceOn-state resistanceStatic drain-sourceOn-state voltageLead resistance
Input capacitanceOutput capacitance
Reverse transfer capacitanceTotal gate chargeTurn-on delay timeTurn-on rise timeTurn-off delay timeTurn-off fall time
Reverse recovery timeReverse recovery chargeSource-drain voltageThermal resistanceContact thermal resistance
VDS = VDSS, VGS = 0VID = 20mA, VDS = 10VVGS = VGSS, VDS = 0VID = 200AVGS = 15VID = 200AVGS = 15VID = 200Aterminal-chipVDS = 10VVGS = 0V
VDD = 48V, ID = 200A, VGS = 15V
VDD = 48V, ID = 200A, VGS1 = VGS2 = 15VRG = 6.3Ω, Inductive load switching operationIS = 200A
IS = 200A, VGS = 0V
MOSFET part (1/6 module)*7MOSFET part (1/6 module)*3Case to fin, Thermal grease Applied*8 (1/6 module)Case to fin, Thermal grease Applied*3, *8 (1/6 module)
Conditions
Min.—4.7——————————————————————
LimitsTyp.—6—1.452.50.290.500.81.12———1200—————6.0———0.10.09
Max.17.31.52.0—0.40———75106—400400450300250—1.30.190.142——
UnitmAVµAmΩVmΩnFnCnsnsµCV°C/W
Tch = 25°CTch = 125°CTch = 25°CTch = 125°CTch = 25°CTch = 125°C
THERMISTOR PARTSymbolRTH*6B*6Parameter
ResistanceB Constant
Conditions
TTH = 25°C*5Resistance at TTH = 25°C, 50°C*5Min.——
LimitsTyp.1004000
Max.——
UnitkΩK
*1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi).
*2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.*3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.*5: TTH is thermistor temperature.
*6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K)*7: TC measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”.
May 2006
元器件交易网www.cecb2b.com
MITSUBISHI FM400TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
PERFORMANCE CURVESOUTPUT CHARACTERISTICS(TYPICAL)ChipVGS = 20V15V12V10VTRANSFER CHARACTERISTICS(TYPICAL)ChipVDS = 10V400350400DRAIN CURRENT ID (A)30025020015010050000.20.40.6Tch = 25°C0.81.09VDRAIN CURRENT ID (A)300Tch = 125°CTch = 25°C2001000579111315DRAIN-SOURCE VOLTAGE VDS (V)GATE-SOURCE VOLTAGE VGS (V)ID = 200AVGS = 12VVGS = 15VGATE THRESHOLD VOLTAGE VGS(th) (V)DRAIN-SOURCEON-STATE RESISTANCE rDS(ON) (mΩ)3.53.02.52.01.51.00.500DRAIN-SOURCE ON-STATEVOLTAGE VS. TEMPERATURE(TYPICAL)Chip765432100GATE THRESHOLDVOLTAGE VS. TEMPERATURE(TYPICAL)VDS = 10VID = 20mA2040608010012014016020406080100120140160CHANNEL TEMPERATURE Tch (°C)CHANNEL TEMPERATURE Tch (°C)2.0DRAIN-SOURCE ON-STATEVOLTAGE VS. GATE BIAS(TYPICAL)ChipTch = 25°C10275CAPACITANCE VS.DRAIN-SOURCE VOLTAGE(TYPICAL)DRAIN-SOURCEON-STATE VOLTAGE VDS(ON) (V)1.6CAPACITANCE (nF)32Ciss1.20.8ID = 400A0.40ID = 200AID = 100A16201017532CossVGS = 0V04812Crss100–110235710023571012357102DRAIN-SOURCE VOLTAGE VDS (V)May 2006
GATE-SOURCE VOLTAGE VGS (V)元器件交易网www.cecb2b.com
MITSUBISHI FM400TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
20GATE CHARGE CHARACTERISTICS(TYPICAL)ID = 200A103FREE-WHEEL DIODEFORWARD CHARACTERISTICS(TYPICAL)ChipVGS = 0VTch = 125°CTch = 25°CGATE-SOURCE VOLTAGE VGS (V)SOURCE CURRENT IS (A)1612840VDD = 24VVDD = 48V75321027532020040060080010001200140016001800GATE CHARGE QG (nC)1010.50.60.70.80.91.0SOURCE-DRAIN VOLTAGE VSD (V)10375HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)1047532HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)td(off)td(on)trtfConditions:VDD = 48VVGS = ±15VID = 200ATch = 125°CInductive load010203040506070SWITCHING TIME (ns)3td(off)2SWITCHING TIME (ns)1037532td(on)1027532trtfConditions:VDD = 48VVGS = ±15VRG = 6.3ΩTch = 125°CInductive load102753210111023571022357103101DRAIN CURRENT ID (A)GATE RESISTANCE RG (Ω)101HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)SWITCHING LOSS (mJ/pulse)32SWITCHING LOSS (mJ/pulse)75102753275327532HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)Esw(off)Esw(on)ErrConditions:VDD = 48VVGS = ±15VRG = 6.3ΩTch = 125°CInductive load23571022357103101Esw(on)Esw(off)100753210010–1753210–211010–1Conditions:75VDD = 48V3VGS = ±15V2ID = 200A–21001020ErrTch = 125°CInductive load3040506070DRAIN CURRENT ID (A)GATE RESISTANCE RG (Ω)May 2006
元器件交易网www.cecb2b.com
MITSUBISHI FM400TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
REVERSE RECOVERY CHARACTERISTICSOF FREE-WHEEL DIODE(TYPICAL)10332TRANSIENT THERMALIMPEDANCE CHARACTERISTICS10–3235710–2235710–1235710023571011007532trrIrrNORMALIZED TRANSIENTTHERMAL IMPEDANCE Zth(ch-c)75Irr (A), trr (ns)102753210–1753210–175321017532100110Conditions:VDD = 48VVGS = ±15VRG = 6.3ΩTch = 25°CInductive load2357102235710310–2753Single pulse2Tch = 25°C10–2753210–3Per unit base = Rth(ch-c) = 0.19°C/W10–310–5235710–4235710–3SOURCE CURRENT IS (A)TIME (s)CHIP LAYOUT(110)(97)90.857.824.8NP49.229.47TrUP1TrVP13TrWP14(67)TrUNTrVNTrWN(80)(90)LABEL SIDE126UVW25.458.491.4May 2006
