®2N6668
SILICON PNP POWER DARLINGTON TRANSISTOR
s
ss
STMicroelectronics PREFERREDSALESTYPE
PNP DARLINGTON
INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE
APPLICATIONS: sGENERAL PURPOSE SWITCHING
sGENERAL PURPOSE SWITCHING ANDAMPLIFIER
TO-220ABSOLUTE MAXIMUM RATINGS
SymbolVCBOVCEOVEBOICICMIBPtotTstgTjbOelosParameterCollector-Base Voltage (IE = 0)Collector-Emitter Voltage (IB = 0)Emitter-Base Voltage (IC = 0)Collector CurrentCollector Peak CurrentBase CurrentTotal Dissipation at Tc ≤ 25 oCStorage TemperatureMax. Operating Junction Temperature terP)s(tcudoO -elosbINTERNAL SCHEMATIC DIAGRAMrP tetcudo123 )(sR1(typ) = 8 kΩ R2(typ) = 120 ΩValue80805101525065-65 to 150150UnitVVVAAmAWoCoCFor PNP type voltage and current values are negative. December 2000
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2N6668
THERMAL DATA
Rthj-caseRthj-ambThermal Resistance Junction-case MaxThermal Resistance Junction-ambient Max1.9262.5ooC/WC/WELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
ParameterCollector Cut-offICEOCurrent (IB = 0)IEBOEmitter Cut-off Current(IC = 0)ICEVCollector Cut-offCurrent (VEB = -1.5V)VCEO(sus)∗Collector-EmitterSustaining Voltage(IB=0)VCE(sat)∗Collector-EmitterSaturation VoltageVBE(sat)∗hFE∗Base-EmitterSaturation VoltageDC Current GainSymbolTest ConditionsVCE = 80 VVEB = 5 VVCE = 80 VIC = 200 mA80Min.Typ.Max.15300UnitmAmAµAVIC = 5 A IB = 0.01 AIC = 10 A IB = 0.1 AIC = 5 A IB = 0.01 AIC = 10 A IB = 0.1 AIC = 5 A VCE = 3 VIC = 10 A VCE = 3 V23∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %For PNP type voltage and current values are negative.
bOelos terP)s(tcudoO -elosbrP te1000100tcudo2.84.520000 )(sVVVV2/4®http://oneic.com/
2N6668
TO-220 MECHANICAL DATADIM.ACDD1EFF1F2GG1H2L2L4L5L6L7L9DIA.mmMIN.4.401.232.400.490.611.141.144.952.410.013.02.6515.256.23.53.75TYP.MAX.MIN.0.1730.0480.0940.0190.0240.0440.0440.1940.0940.3930.5110.1040.6000.244 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.7 10.40 14.0 2.95 15.75 6.6 3.93 3.85inchTYP.MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 1.27 0.050 16.4 0.5bOelos terP)s(tcudoO -elosb0.1370.147rP teudo 0.551 0.116ct )(s 0.620 0.260 0.154 0.151P011C3/4®http://oneic.com/
2N6668
bOelos terP)s(tcudoO -elosbrP tetcudo )(sInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2000 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.http://www.st.com4/4®http://oneic.com/
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STM2N6668
