4N60 Power MOSFET

4 Amps, 600/650 Volts

N-CHANNEL POWER MOSFET

1

TO-251

1

TO-220

4N60 Power MOSFET

󰂄 DESCRIPTION

1

TO-220F

1

TO-220F1

The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

1

TO-252

󰂄 FEATURES

* RDS(ON) = 2.5Ω @VGS = 10 V

* Ultra low gate charge ( typical 15 nC )

* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF ) * Fast switching capability * Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

Lead-free: 4N60L Halogen-free:4N60G

󰂄 SYMBOL

2.Drain1.Gate

3.Source

󰂄 ORDERING INFORMATION

Ordering Number Pin Assignment

Package Packing

Normal Lead Free Plating Halogen Free 1 2 3 4N60-x-TA3-T 4N60L-x-TA3-T 4N60G-x-TA3-T TO-220 G D S Tube 4N60-x-TF1-T 4N60L-x-TF1-T 4N60G-x-TF1-T TO-220F1G D S Tube 4N60-x-TF3-T 4N60L-x-TF3-T 4N60G-x-TF3-T TO-220FG D S Tube 4N60-x-TM3-T 4N60L-x-TM3-T 4N60G-x-TM3-T TO-251 G D S Tube 4N60-x-TN3-R 4N60L-x-TN3-R 4N60G-x-TN3-R TO-252 G D S Tape ReelNote: Pin Assignment: G: Gate D: Drain S: Source 4N60L-x-TA3-T(1)Packing Type(2)Package Type(3)Drain-Source Voltage(4)Lead Plating(1) T: Tube, R: Tape Reel(2) TA3: TO-220, TF1: TO-220F1, TF3: TO-220F TM3: TO-251, TN3: TO-252(3) A: 600V, B: 650V(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn

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QW-R502-061, K

4N60 Power MOSFET

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ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOLRATINGS UNIT 4N60-A 600 V Drain-Source Voltage VDSS

4N60-B 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 4.4 A Continuous ID 4.0 A Drain Current

Pulsed (Note 2) IDM 16 A Single Pulsed (Note 3)EAS 260 mJ Avalanche Energy

Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns

TO-220 106 TO-220F/TO-220F1 36 Power Dissipation PD W

TO-251 50 TO-252 50

Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 4.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

󰂄 THERMAL DATA

PARAMETER PACKAGE SYMBOLRATINGS UNIT TO-220 62.5 TO-220F/TO-220F162.5

Junction-to-Ambient θJA °С /W

TO-251 83 TO-252 83

TO-220 1.18 TO-220F/TO-220F13.47

Junction-to-Case θJc °С /W

TO-251 2.5 TO-252 2.5

󰂄 ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)

PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAXUNIT

OFF CHARACTERISTICS

4N60-A 600 V

Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA

4N60-B 650 V

Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V 10μA

Forward VGS = 30 V, VDS = 0 V 100nA

Gate-Source Leakage Current IGSS

-100nAReverse VGS = -30 V, VDS = 0 V

Breakdown Voltage Temperature

△BVDSS/△TJID = 250 μA, Referenced to 25°C 0.6 V/°С

Coefficient

ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0VStatic Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2 A 2.5ΩDYNAMIC CHARACTERISTICS Input Capacitance CISS 520 670pF

VDS = 25 V, VGS = 0 V, f = 1MHz Output Capacitance COSS 70 90pF

8 11pFReverse Transfer Capacitance CRSS

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ELECTRICAL CHARACTERISTICS(Cont.)

4N60 Power MOSFET

PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAXUNIT

SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 13 35nsTurn-On Rise Time tR 45 100nsVDD = 300V, ID = 4.0A, RG = 25Ω

(Note 1, 2) Turn-Off Delay Time tD(OFF) 25 60ns

35 80nsTurn-Off Fall Time tF

Total Gate Charge QG 15 20nC

VDS= 480V,ID= 4.0A, VGS= 10 V

Gate-Source Charge QGS 3.4 nC

(Note 1, 2)

7.1 nCGate-Drain Charge QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4 A 1.4V

Maximum Continuous Drain-Source Diode

IS 4.4A Forward Current

Maximum Pulsed Drain-Source Diode

ISM 17.6A Forward Current

Reverse Recovery Time tRR 250 nsVGS = 0 V, IS = 4.4 A,

dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR 1.5 μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

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QW-R502-061, K

4N60 Power MOSFET

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D.U.T.+VDS-+-LTEST CIRCUITS AND WAVEFORMS

RGDriverVGSSame Type as D.U.T.*dv/dt controlled by RG* ISD controlled by pulse period* D.U.T.-Device Under TestVDD

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS(Driver)

PeriodP.W.D=P. W.PeriodVGS=10VIFM, Body Diode Forward CurrentISD(D.U.T.)

IRMBody Diode Reverse Currentdi/dtBody Diode Recovery dv/dtVDS(D.U.T.)

VDDBody Diode Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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Breakdown Voltage Variation vs.

Temperature

1.2

Drain-Source Breakdown Voltage, BVDSS (Normalized) (V)Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω)3.02.52.01.51.00.50.0-100

Note: 1. VGS=10V2. ID=4A-50

0

50

100

150

200

On-Resistance Junction Temperature

TYPICAL CHARACTERISTICS

1.1

1.0

0.9

Note: 1. VGS=0V2. ID=250µA-50

0

50

100

150

200

0.8-100

Junction Temperature, TJ(°С)

Junction Temperature, TJ(°С)

On-State Characteristics

10

VGSTop: 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0VTransfer Characteristics

10

25°С5.0V1

150°С1

0.1

Notes:1. 250µs Pulse Test2.TC=25°С0.1

2

4

6

Notes:1. VDS=50V 2.250µs Pulse Test0.1110

810

Drain-to-Source Voltage, VDS(V)

Gate-Source Voltage, VGS(V)

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TYPICAL CHARACTERISTICS(Cont.)

Gate-Source Voltage, VGS(V)Capacitance (pF)

Thermal Response, θJC(t)PD(w)

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TYPICAL CHARACTERISTICS(Cont.)

Drain Current, ID(A)

UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein. UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice.

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