专利内容由知识产权出版社提供
专利名称：Method for the manufacturing of a
capacitive pressure sensor, and a capacitivepressure sensor
发明人：Jaakko Ruohio,Riikka Astrom申请号：US11114215申请日：20050426
公开号：US200502405A1公开日：20051110
专利附图：
摘要：The invention relates to measuring devices for the measuring of pressure, andmore specifically to capacitive pressure sensors. The silicon crystal planes {111} are
located at the corners of a wet etched membrane well of a pressure sensor elementaccording to the present invention. An object of the invention is to provide an improvedmethod of manufacturing a capacitive pressure sensor, and a capacitive pressure sensorsuitable for use, in particular, in small capacitive pressure sensor solutions.
申请人：Jaakko Ruohio,Riikka Astrom
地址：Helsinki FI,Vantaa FI
国籍：FI,FI
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