4.0A Dual High-Speed Power MOSFET Drivers With Enable
Features
•High Peak Output Current: 4.0A (typical)
•Independent Enable Function for Each Driver Output
•Low Shoot-Through/Cross-Conduction Current in Output Stage
•Wide Input Supply Voltage Operating Range:-4.5V to 18V
•High Capacitive Load Drive Capability:-2200pF in 15ns (typical)-5600 pF in 26ns (typical)
•Short Delay Times: 50ns (typical)
•Latch-Up Protected: Will Withstand 1.5A Reverse Current
•Logic Input Will Withstand Negative Swing Up To 5V
•Space-Saving Packages:
-8-Lead 6x5 DFN, PDIP, SOIC
General Description
The MCP14E3/MCP14E4/MCP14E5 devices are afamily of 4.0A buffers/MOSFET drivers. Dual-inverting,dual-noninvertering, and complementary outputs arestandard logic options offered.
The MCP14E3/MCP14E4/MCP14E5 drivers arecapable of operating from a 4.5V to 18V single powersupply and can easily charge and discharge 2200pFgate capacitance in under 15ns (typical). They providelow impedance in both the ON and OFF states toensure the MOSFET’s intended state will not beaffected, even by large transients. The MCP14E3/MCP14E4/MCP14E5 inputs may be driven directlyfrom either TTL or CMOS (2.4V to 18V).
Additional control of the MCP14E3/MCP14E4/MCP14E5 outputs is allowed by the use of separateenable functions. The ENB_A and ENB_B pins areactive high and are internally pulled up to VDD. The pinsmaybe left floating for standard operation.
The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0Adriver family is offered in both surface-mount and pin-through-hole packages with a -40°C to +125°Ctemperature rating. The low thermal resistance of thethermally enhanced DFN package allows for greaterpower dissipation capability for driving heaviercapacitive or resistive loads.
These devices are highly latch-up resistant under anyconditions within their power and voltage ratings. Theyare not subject to damage when up to 5V of noisespiking (of either polarity) occurs on the ground pin.They can accept, without damage or logic upset, up to1.5A of reverse current being forced back into theiroutputs. All terminals are fully protect againstElectrostatic Discharge (ESD) up to 4kV.
Applications
••••
Switch Mode Power SuppliesPulse Transformer DriveLine Drivers
Motor and Solenoid Drive
Package TypesMCP14E48-PinMCP14E5PDIP/SOICMCP14E3ENB_AIN AGNDIN B123487658-Pin6x5 DFN (1)ENB_AIN AGNDIN B8127MCP14E4MCP14E3MCP14E5ENB_BOUT AVDDOUT BENB_BOUT AVDDOUT BENB_BOUT AVDDOUT BENB_BOUT AVDDOUT BENB_BOUT AVDDOUT BENB_BOUT AVDDOUT B6Note1:Exposed pad of the DFN package is electrically isolated.345© 2008 Microchip Technology Inc.DS22062B-page 1
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MCP14E3/MCP14E4/MCP14E5
Functional Block Diagram
Inverting
VDD
VDD
InternalPull-up
Output
Non-inverting
Enable
Input
Effective Input C = 20pF (Each Input)
GND
4.7V
4.7V
Dual Inverting MCP14E3
MCP14E4 Dual Noninverting
MCP14E5One Inverting, One Noninverting
DS22062B-page 2© 2008 Microchip Technology Inc.
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MCP14E3/MCP14E4/MCP14E5
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under \"MaximumRatings\" may cause permanent damage to the device. This isa stress rating only and functional operation of the device atthose or any other conditions above those indicated in theoperational sections of this specification is not intended.Exposure to maximum rating conditions for extended periodsmay affect device reliability.
Absolute Maximum Ratings †
Supply Voltage................................................................+20VInput Voltage...............................(VDD + 0.3V) to (GND – 5V)Enable Voltage.............................(VDD+0.3V) to (GND-5V)Input Current (VIN>VDD)................................................50mAPackage Power Dissipation (TA=50°C)
8L-DFN....................................................................... Note38L-PDIP........................................................................1.10W8L-SOIC.....................................................................665mW
DC CHARACTERISTICS(NOTE2)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Input
Logic ‘1’, High Input VoltageLogic ‘0’, Low Input VoltageInput CurrentInput VoltageOutput
High Output VoltageLow Output VoltageOutput Resistance, HighOutput Resistance, LowPeak Output CurrentLatch-Up Protection With-stand Reverse CurrentSwitching Time (Note1)Rise TimeFall Time
Propagation Delay TimePropagation Delay TimeHigh-Level Input VoltageLow-Level Input VoltageHysteresis
Enable Leakage CurrentPropagation Delay TimePropagation Delay TimeNote1:
2:3:
tRtFtD1tD2VEN_HVEN_LVHYSTIENBLtD3tD4
————1.601.300.1040——
151846501.902.200.30856050
303055552.902.400.60115——
nsnsnsnsVVVµAnsns
VDD=12V,
ENB_A= ENB_B= GNDFigure4-3 (Note1)Figure4-3 (Note1)Figure4-1, Figure4-2 CL = 2200pF
Figure4-1, Figure4-2CL = 2200pF
Figure4-1, Figure4-2Figure4-1, Figure4-2VDD=12V, LO to HI TransitionVDD=12V, HI to LO Transition
VOHVOLROHROLIPKIREV
VDD – 0.025
—————
——2.52.54.0>1.5
—0.0253.53.0——
VVΩΩAA
DC TestDC Test
IOUT = 10mA, VDD = 18VIOUT = 10mA, VDD = 18VVDD = 18V (Note 2)Duty cycle ≤ 2%, t ≤ 300µs
VIHVILIINVIN
2.4—–1-5
1.51.3——
—0.81VDD+0.3
VVµAV
0V ≤ VIN ≤ VDD
Sym
Min
Typ
Max
Units
Conditions
Enable Function (ENB_A, ENB_B)
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
© 2008 Microchip Technology Inc.DS22062B-page 3
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MCP14E3/MCP14E4/MCP14E5
DC CHARACTERISTICS(NOTE2) (CONTINUED)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Power SupplySupply VoltageSupply Current
VDDIDDIDDIDDIDDIDDIDDIDDIDD
Note1:
2:3:
4.5————————
—1.600.601.201.201.400.551.001.00
18.02.000.901.401.401.800.751.201.20
VmAmAmAmAmAmAmAmA
VIN_A=3V,VIN_B=3V, ENB_A=ENB_B=HighVIN_A=0V,VIN_B=0V, ENB_A=ENB_B=HighVIN_A=3V,VIN_B=0V, ENB_A=ENB_B=HighVIN_A=0V,VIN_B=3V, ENB_A=ENB_B=HighVIN_A=3V,VIN_B=3V, ENB_A=ENB_B=LowVIN_A=0V,VIN_B=0V, ENB_A=ENB_B=LowVIN_A=3V,VIN_B=0V, ENB_A=ENB_B=LowVIN_A=0V,VIN_B=3V, ENB_A=ENB_B=Low
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
DS22062B-page 4© 2008 Microchip Technology Inc.
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MCP14E3/MCP14E4/MCP14E5
DC CHARACTERISTICS(OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Input
Logic ‘1’, High Input VoltageLogic ‘0’, Low Input VoltageInput CurrentOutput
High Output VoltageLow Output VoltageOutput Resistance, HighOutput Resistance, LowSwitching Time (Note1)Rise TimeFall TimeDelay TimeDelay Time
High-Level Input VoltageLow-Level Input VoltageHysteresis
Enable Leakage CurrentPropagation Delay TimePropagation Delay TimePower SupplySupply VoltageSupply Current
VDDIDDIDDIDDIDDIDDIDDIDDIDD
Note1:
4.5————————
—2.00.81.51.51.80.61.11.1
18.03.01.12.02.02.80.81.81.8
VmAmAmAmAmAmAmAmA
VIN_A=3V, VIN_B=3V, ENB_A=ENB_B=HighVIN_A=0V, VIN_B=0V, ENB_A=ENB_B=HighVIN_A=3V, VIN_B=0V, ENB_A=ENB_B=HighVIN_A=0V, VIN_B=3V, ENB_A=ENB_B=HighVIN_A=3V, VIN_B=3V, ENB_A=ENB_B=LowVIN_A=0V, VIN_B=0V, ENB_A=ENB_B=LowVIN_A=3V, VIN_B=0V, ENB_A=ENB_B=LowVIN_A=0V, VIN_B=3V, ENB_A=ENB_B=Low
tRtFtD1tD2VEN_HVEN_LVHYSTIENBLtD3tD4
————1.601.30—40——
252850502.201.800.40875060
404070702.902.40—115——
nsnsnsnsVVVµAnsns
VDD=12V, ENB_A= ENB_B= GNDFigure4-3Figure4-3
Figure4-1, Figure4-2CL = 2200pF
Figure4-1, Figure4-2CL = 2200pF
Figure4-1, Figure4-2 Figure4-1, Figure4-2VDD=12V, LO to HI TransitionVDD=12V, HI to LO Transition
VOHVOLROHROL
VDD – 0.025
———
——3.03.0
—0.0256.05.0
VVΩΩ
DC TESTDC TEST
IOUT = 10mA, VDD = 18VIOUT = 10mA, VDD = 18V
VIHVILIIN
2.4—–10
———
—0.8+10
VVµA
0V ≤ VIN ≤ VDD
Sym
Min
Typ
Max
Units
Conditions
Enable Function (ENB_A, ENB_B)
Switching times ensured by design.
© 2008 Microchip Technology Inc.DS22062B-page 5
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MCP14E3/MCP14E4/MCP14E5
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Temperature RangesSpecified Temperature RangeMaximum Junction TemperatureStorage Temperature RangePackage Thermal ResistancesThermal Resistance, 8L-6x5 DFNThermal Resistance, 8L-PDIPThermal Resistance, 8L-SOIC
θJAθJAθJA
———
35.7.3149.5
———
°C/W°C/W°C/W
Typical four-layer board with vias to ground plane
TATJTA
–40—–65
———
+125+150+150
°C°C°C
Sym
Min
Typ
Max
Units
Conditions
DS22062B-page 6© 2008 Microchip Technology Inc.
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MCP14E3/MCP14E4/MCP14E5
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number ofsamples and are provided for informational purposes only. The performance characteristics listed herein arenot tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
100Rise Time (ns)8010,000 pF4,700 pF6,800 pF2,200 pF100 pF12010,000 pF4,700 pF2,200 pFFall Time (ns)9060300100 pF6,800 pF604020046810121416184681012141618Supply Voltage (V)Supply Voltage (V)FIGURE 2-1:Voltage.60Rise Time vs. Supply FIGURE 2-4:Voltage.60Fall Time vs. Supply 12V50Rise Time (ns)40305V5012VFall Time (ns)40305V18V2010010018V201001001000Capacitive Load (pF)100001000Capacitive Load (pF)10000FIGURE 2-2:Load.
242220Time (ns)1816141210-40-25-105tFALLRise Time vs. Capacitive FIGURE 2-5:Load.
60Propagation Delay (ns)Fall Time vs. Capacitive VDD = 18VVDD = 12V5550454035tD1tRISEtD2203550658095110125Temperature (°C)4567101112Input Amplitude (V)FIGURE 2-3:Temperature.
Rise and Fall Times vs. FIGURE 2-6:Amplitude.
Propagation Delay vs. Input © 2008 Microchip Technology Inc.DS22062B-page 7
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MCP14E3/MCP14E4/MCP14E5
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
140Propagation Delay (ns)Propagatin Delay (ns)120100806040204681012141618Supply Voltage (V)tD2tD18070605040VDD = 12VtD1tD2-40-25-105203550658095110125Temperature (°C)FIGURE 2-7:Supply Voltage.
1.4Quiescent Current (mA)1.21.00.80.60.40.20.0468Input = 0Input = 1Propagation Delay Time vs. FIGURE 2-10:Temperature.
1.8Quiescent Current (mA)1.61.41.21.00.80.60.40.2-40-25-105Propagation Delay Time vs. VDD = 18VInput = 1Input = 01012141618203550658095110125Temperature (°C)Supply Voltage (V)FIGURE 2-8:Supply Voltage.
87ROUT-HI (Ω)654321468TA = 25°CTA = 125°CQuiescent Current vs. FIGURE 2-11:Temperature.
87ROUT-LO (Ω)654321TA = 25°CTA = 125°CQuiescent Current vs. VIN = 0V (MCP14E3)VIN = 5V (MCP14E4)VIN = 5V (MCP14E3)VIN = 0V (MCP14E4)10121416184681012141618Supply Voltage (V)Supply Voltage (V)FIGURE 2-9:Output Resistance (Output High) vs. Supply Voltage.FIGURE 2-12:Output Resistance (Output Low) vs. Supply Voltage.
DS22062B-page 8© 2008 Microchip Technology Inc.
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MCP14E3/MCP14E4/MCP14E5
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
120Supply Current (mA)100100 kHzVDD = 18V12050 kHzVDD = 18V6,800 pF4,700 pF2,200 pF10,000 pF80400 kHz200 kHzSupply Current (mA)100806040206040200100650 kHz100 pF01000Capacitive Load (pF)1000010100Frequency (kHz)1000FIGURE 2-13:Capacitive Load.70Supply Current (mA)6050403020100100650 kHz400 kHzSupply Current vs. FIGURE 2-16:Frequency.70Supply Current vs. VDD = 12V50 kHzVDD = 12V6,800 pF4,700 pF100 kHz200 kHzSupply Current (mA)60504030201002,200 pF10,000 pF100 pF1000Capacitive Load (pF)1000010100Frequency (kHz)1000FIGURE 2-14:Capacitive Load.35Supply Current (mA)302520151050100650 kHz400 kHzSupply Current vs. FIGURE 2-17:Frequency.35Supply Current vs. VDD = 6V50 kHzVDD = 6V6,800 pF100 kHz200 kHzSupply Current (mA)30252015105010,000 pF4,700 pF2,200 pF100 pF1000Capacitive Load (pF)1000010100Frequency (kHz)1000FIGURE 2-15:Capacitive Load.
Supply Current vs. FIGURE 2-18:Frequency.
Supply Current vs. © 2008 Microchip Technology Inc.DS22062B-page 9
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MCP14E3/MCP14E4/MCP14E5
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
2.1Input Threshold (V)1.91.71.51.31.10.90.7-40-25-105203550658095110125Temperature (°C)VHIVDD = 18V0.7Enable Hysteresis (V)0.60.50.40.30.20.10.0-40-25-105VDD = 12VVLO203550658095110125Temperature (°C)FIGURE 2-19:Temperature.
2.01.8VHIInput Threshold vs. FIGURE 2-22:Temperature.
1E-06Crossover Energy (A*sec)Enable Hysteresis vs. Input Threshold (V)1.6VLO1E-071.41.21.04681012141618Supply Voltage (V)1E-081E-094681012141618Supply Voltage (V)FIGURE 2-20:Voltage.
3.1Enable Threshold (V)2.92.72.52.32.11.91.71.5-40-25-105VEN_LVEN_HInput Threshold vs. Supply
Note:VDD = 12VThe values on this graph represent theloss seen by both drivers in a packageduring one complete cycle.For a single driver, divide the statedvalue by 2.For a signal transition of a single driver,divide the state value by 4.FIGURE 2-23:Supply Voltage.
Crossover Energy vs. 203550658095110125Temperature (°C)FIGURE 2-21:Temperature.
Enable Threshold vs. DS22062B-page 10© 2008 Microchip Technology Inc.
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