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专利名称：MRAM with coil for creating offset field发明人：Daniel Braun,Dietmar Gogl申请号：US10998808申请日：20041130公开号：US07200033B2公开日：20070403
专利附图：
摘要：An MRAM memory chip includes a plurality of magnetoresistive memory cellseach including a magnetic tunnel junction having first (fixed) and second (free) magneticregions, where the second magnetic region includes at least two ferromagnetic layersthat are antiferromagnetically coupled, wherein a coil surrounds the memory chip for
creating a magnetic offset field. Further, a method of writing to an MRAM chip includesbringing the memory cells into an active state exhibiting a reduced switching field beforewriting thereto and bringing the memory cells into a passive state exhibiting enlargedswitching field after writing thereto.
申请人：Daniel Braun,Dietmar Gogl
地址：Paris FR,Essex Junction VT US
国籍：FR,US
代理机构：Edell, Shapiro & Finnan, LLC
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