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专利名称：Sputtering apparatus and sputtering
method
发明人：末次 大輔,平崎 貴英,大熊 崇文申请号：JP2017228376申请日：20171128公开号：JP2019099837A公开日：20190624
专利附图：
摘要：Problem to be solved: to provide a sputtering apparatus and sputteringmethod capable of forming a film in which the coating quality of the thin film is good andthe substrate surface distribution can be made uniform. Sputtering apparatusVacuum
chamber 1Sputtered pulse power supply 30 connected to target material 7DeflectionCoyle 21 disposed in space between target material 7 and substrateThe deflection Coylepulse power supply 31 connected to the deflection CoyleConnected to the sputter pulsepower supply 30 and the deflection Coyle pulse power supplyA pulse timing controller40, which controls the timing of each pulse from the sputter pulse power supply 30 andthe deflection Coyle pulse power supply 31, controls the timing of each pulse to besynchronized or varied.Diagram
申请人：パナソニックＩＰマネジメント株式会社
地址：大阪府大阪市区城見２丁目１番６１号
国籍：JP
代理人：松谷 道子,岡部 博史
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