专利内容由知识产权出版社提供
专利名称：Method of manufacturing a microelectronic
vacuum device
发明人：Hiroshi Komatsu申请号：US07/659218申请日：19910221公开号：US05192240A公开日：19930309
摘要：According to an embodiment of the present invention, a planar microelectronicvacuum triode comprises a cathode with three tips for electron emission that have beensharpened to points better than 1000 . ANG. by a microfabrication process of over-etching (excess etching) the cathod electrode layer. The cathode tips and, alternatively,an anode electrode too are elevated above the surface of a substrate such that astraight-line path exists for electrons to flow from the cathode tips to the anode. A self-aligned fabrication process is used to advantage to have the edge of a gate electrodethat is nearest to the cathode and its tips complement the adjacent edge of the cathodeelectrode. The combination results in very low threshold voltages needed to initiate theelectron flow and a high yield of anode current compared to cathode current. Theaddition of a shield electrode to the triode produces a tetrode device that exhibits a veryhigh anode resistance.
申请人：SEIKO EPSON CORPORATION
代理人：Raymond J. Werner
更多信息请下载全文后查看
