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TIP122FPTIP127FP
COMPLEMENTARYSILICONPOWER
DARLINGTONTRANSISTORS
sss
SGS-THOMSONPREFERREDSALESTYPESFULLYMOLDEDISOLATEDPACKAGE2000VDCISOLATION(U.L.COMPLIANT)
DESCRIPTION
TheTIP122FPisasiliconepitaxial-baseNPNpowertransistorinmonolithicDarlingtonconfigurationJedecTO-220FPfullymoldedisolatedpackage,intentedforuseinpowerlinearandswitchingapplications.
ThecomplementaryPNPtypeisTIP127FP.
1
2
3
TO-220FP
INTERNALSCHEMATICDIAGRAM
R1Typ.=5KΩR2Typ.=150Ω
ABSOLUTEMAXIMUMRATINGS
Symbol
Parameter
NPNPNP
VCBOVCEOVEBOICICMIBPtotTstgTj
Collector-BaseVoltage(IE=0)Collector-EmitterVoltage(IB=0)Emitter-BaseVoltage(IC=0)CollectorCurrentCollectorPeakCurrentBaseCurrent
TotalDissipationatTcase≤ 25 C
o
Tamb≤ 25 CStorageTemperature
Max.OperatingJunctionTemperature
o
ValueTIP122FPTIP127FP
1001005580.1292-65to150
150
Unit
VVVAAAWW
oo
CC
*ForPNPtypesvoltageandcurrentvaluesarenegative.
April19981/4
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TIP122FP/TIP127FP
THERMALDATA
Rthj-caseRthj-amb
ThermalResistanceJunction-caseThermalResistanceJunction-ambient
MaxMax
4.362.5
oo
C/WC/W
ELECTRICALCHARACTERISTICS(Tcase=25oCunlessotherwisespecified)
SymbolICEOICBOIEBO
Parameter
CollectorCut-offCurrent(IB=0)CollectorCut-offCurrent(IB=0)EmitterCut-offCurrent(IC=0)
TestConditions
VCE=50VVCE=100VVEB=5VIC=30mA
100Min.
Typ.
Max.0.50.22
UnitmAmAmAV
VCEO(sus)*Collector-Emitter
SustainingVoltage(IB=0)VCE(sat)*VBE(on)*hFE*
Collector-EmitterSaturationVoltageBase-EmitterVoltageDCCurrentGain
IC=3AIC=5AIC=3AIC=0.5AIC=3A
IB=12mAIB=20mAVCE=3VVCE=3VVCE=3V
10001000
242.5
VVV
*ForPNPtypesvoltageandcurrentvaluesarenegative.
2/4
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TIP122FP/TIP127FP
TO-220FPMECHANICALDATA
DIM.
MIN.
ABDEFF1F2GG1HL2L3L4L6L7Ø
28.69.815.9934.42.52.50.450.751.151.154.952.410
16
30.610.616.49.33.2
1.1260.3850.6260.3540.118
mmTYP.
MAX.4.62.72.750.711.71.75.22.710.4
MIN.0.1730.0980.0980.0170.0300.0450.0450.1950.0940.393
0.630
1.2040.4170.50.3660.126
inchTYP.
MAX.0.1810.1060.1080.0270.0390.0670.0670.2040.1060.409
ABL3
L6
L7
F1¯
FDG1EHF2123
L2
L4
G3/4
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TIP122FP/TIP127FP
Informationfurnishedisbelievedtobeaccurateandreliable.However,SGS-THOMSONMicroelectronicsassumesnoresponsabilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultsfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSGS-THOMSONMicroelectronics.Specificationsmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.
SGS-THOMSONMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSGS-THOMSONMicroelectonics.
©1998SGS-THOMSONMicroelectronics-PrintedinItaly-AllRightsReserved
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