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专利名称：Method and System for Forming a Pattern
on a Reticle Using Charged Particle BeamLithography
发明人：Akira Fujimura申请号：US15654941申请日：20170720
公开号：US20170322485A1公开日：20171109
专利附图：
摘要：A method and system for fracturing or mask data preparation is disclosed inwhich a desired substrate pattern for a substrate is input. A plurality of charged particle
beam shots is then determined which will form a reticle pattern on a reticle, where thereticle pattern will produce a substrate pattern on the substrate using an opticallithography process, wherein the substrate pattern is within a predetermined toleranceof the desired substrate pattern. A similar method and a similar system for forming apattern on a reticle are also disclosed.
申请人：D2S, Inc.
地址：San Jose CA US
国籍：US
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