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专利名称：ELECTROSTATIC DISCHARGE PROTECTION
STRUCTURE AND METHOD FOR FORMINGTHE SAME
发明人：ZHENGHAO GAN申请号：US14057169申请日：20131018
公开号：US20140361400A1公开日：20141211
专利附图：
摘要：Various embodiments provide electrostatic discharge protection structures andmethods for forming the same. An exemplary structure can include a semiconductor chip
including a through hole. The structure can further include a through silicon via (TSV)structure disposed within the through hole and passing through the semiconductor chip.The TSV structure can have a first surface and a second surface. The structure can furtherinclude a tunneling dielectric layer disposed on the first surface of the TSV structure. Thetunneling dielectric layer can have a surface area covering a top view surface area of theTSV structure and a surface portion of the semiconductor chip surrounding the TSVstructure. Yet further, the structure can include a metal material discretely dispersed inthe tunneling dielectric layer, a first electrode disposed on the tunneling dielectric layer,and a second electrode disposed on the second surface of the TSV structure.
申请人：Semiconductor Manufacturing International (Shanghai) Corporation
地址：Shanghai CN
国籍：CN
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