专利内容由知识产权出版社提供
专利名称：METHOD AND APPARATUS FOR
CONTROLLING BEAM CURRENTUNIFORMITY IN AN ION IMPLANTER
发明人：Rajesh DORAI,Peter F. Kurunczi,Alexander S.
Perel,Wilhelm P. Platow
申请号：US12143144申请日：20080620
公开号：US20090314962A1公开日：20091224
专利附图：
摘要：An electrode assembly for use with an ion source chamber or as part of an ion
implanter processing system to provide a uniform ion beam profile. The electrodeassembly includes an electrode having an extraction slot with length L aligned with anaperture of the ion source chamber for extracting an ion beam. The electrode includes aplurality of segments partitioned within the length of the extraction slot where each ofthe segments is configured to be displaced in at least one direction with respect to theion beam. A plurality of actuators are connected to the plurality of electrode segmentsfor displacing one or more of the segments. By displacing at least one of the plurality ofelectrode segments, the current density of a portion of the ion beam corresponding tothe position of the segment within the extraction slot is modified to provide a uniformcurrent density beam profile associated with the extracted ion beam.
申请人：Rajesh DORAI,Peter F. Kurunczi,Alexander S. Perel,Wilhelm P. Platow
地址：Woburn MA US,Cambridge MA US,Danvers MA US,Somerville MA US
国籍：US,US,US,US
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