MBR20150

Dual High-Voltage Schottky Rectifiers

◆ Half Bridge Rectified、Common Cathode Structure.深圳市强元芯电子有限公司REV:1.01 ProductorCharacter◆ Multilayer Metal -Silicon Potential Structure.◆ Low Power Waste，High Efficiency.◆ Beautiful High Temperature Character.◆ Have Over Voltage protect loop，high reliability.◆ RoHs Product. Typical Reference DataVRRM= 150V IF(AV)= 20APrimary Use● Low Voltage High Frequency Switching Power Supply.● Low Voltage High Frequency Invers Circuit.● Low Voltage Continued Circuit and Protection Circuit.■ MBR20150 Schottky diode,in the manufacture uses the mainprocess technology includes: Silicon epitaxial substrate, P+loop technology,The potential metal and the silicon alloytechnology, the device uses the two chip, the common cathode,the plastic half package structure.Absolute Maximum RatingsItemMaximal Inverted Repetitive Peak VoltageMaximal DC Interdiction VoltageAverage Rectified Forward Current TC=150℃ WholeDeviceunilateralSummarizePolarity

SymbolVRRMVDCIFAVMBR201501501502010UnitAA℃℃Forward Peak Surge Current(Rated Load 8.3 HalfMssine Wave-According to JEDEC Method)Operating Junction TemperatureStorage TemperatureIFSMTJTSTG150-40- +175-40- +175Electricity CharacterItemIRVF Test ConditionTJ =25℃TJ =125℃TJ =25℃VR=VRRMIF=10A MinimumRepresentativeMBR2015012010.90UnituAmAV公司地址：深圳市福田区华强北鼎城国际大厦１５０５室电话：８６０７５５６６８８３１０８　Page 1深圳市强元芯电子有限公司Dual High-Voltage Schottky Rectifiers

The forward voltage and forward current curve

MBR20150

REV:1.01

The reverse leak current and the reverse

voltage (single-device) curve

The crunode capacitance curve

Current Derating Curve, Per Element

公司地址：深圳市福田区华强北鼎城国际大厦１５０５室电话：８６０７５５６６８８３１０８　Page 2深圳市强元芯电子有限公司Dual High-Voltage Schottky Rectifiers

MBR20150REV:1.01

TO-220AB

注意事项：1.XXXX代表日期码，第一码表示公元年的最后一码，第二码表示生产时当月码 （A,B,C⋯.为一月，二月，三月⋯),第三，四码表示大量生产时批次码。 例如:2009年第一月生产的，D/C为9AXX。2.包装及出货:ROHS,50PCS/管,1K/BOX,5K(5K BOXEX)/CARTON, BOXEX及CARTON。MBR20150XXXX修订内容公司地址：深圳市福田区华强北鼎城国际大厦１５０５室电话：８６０７５５６６８８３１０８　

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