AP9T15GH

Pb Free Plating Product

Advanced Power Electronics Corp.▼ Low Gate Charge

▼ Capable of 2.5V gate drive▼ Single Drive Requirement▼ RoHS Compliant

GSDN-CHANNEL ENHANCEMENT MODEPOWER MOSFET

BVDSSRDS(ON)ID

20V50mΩ12.5A

Description

The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness.

GDS

TO-252(H)

G

D

S

TO-251(J)

Absolute Maximum Ratings

SymbolVDSVGS

ID@TC=25℃ID@TC=100℃IDM

PD@TC=25℃TSTGTJ

Parameter

Drain-Source VoltageGate-Source Voltage

Continuous Drain Current, VGS @ 4.5VContinuous Drain Current, VGS @ 4.5VPulsed Drain Current

1

Rating20±1612.586012.50.1-55 to 150-55 to 150

UnitsVVAAAW W/℃℃℃

Total Power DissipationLinear Derating FactorStorage Temperature Range

Operating Junction Temperature Range

Thermal Data

SymbolRthj-cRthj-a

Parameter

Thermal Resistance Junction-caseThermal Resistance Junction-ambient

Max.Max.

Value10110

Units℃/W℃/W

Data and specifications subject to change without notice

200908052-1/4

AP9T15GH/JElectrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSS

ΔBVDSS/ΔTjRDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrssRg

Parameter

Drain-Source Breakdown Voltage

Test Conditions

VGS=0V, ID=250uA

Min.20---0.5---------------Typ.-0.02---10---51285510336070501.67

Max.Units--50801.5-125±1008------580---VV/℃mΩmΩVSuAuAnAnCnCnCnsnsnsnspFpFpFΩ

Breakdown Voltage Temperature CoefficientReference to 25℃, ID=1mA

Static Drain-Source On-Resistance

VGS=4.5V, ID=6AVGS=2.5V, ID=5.2AVDS=VGS, ID=250uAVDS=5V, ID=10AVDS=20V, VGS=0VVDS=16V ,VGS=0VVGS=±16VID=10AVDS=16VVGS=4.5VVDS=10VID=10A

RG=3.3Ω,VGS=5VRD=1ΩVGS=0VVDS=20Vf=1.0MHzf=1.0MHz

Gate Threshold VoltageForward Transconductance

Drain-Source Leakage Current (Tj=25oC)Drain-Source Leakage Current (Tj=150oC)

Gate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceGate Resistance

Source-Drain Diode

SymbolVSD

Parameter

Forward On Voltage2Reverse Recovery Time

2

Test Conditions

IS=10A, VGS=0VIS=10A, VGS=0V,dI/dt=100A/µs

Min.---

Typ.-179

Max.Units1.3--VnsnC

trr

Qrr

Reverse Recovery Charge

Notes:

1.Pulse width limited by safe operating area.2.Pulse width <300us , duty cycle <2%.2/4

AP9T15GH/J

5040oTC=25C40TC=150oCID , Drain Current (A) 5.0V 4.5V30ID , Drain Current (A) 5.0V 4.5V30 3.5V2020 3.5V10 2.5VVG=1.5V10 2.5VVG=1.5V001234500123456VDS , Drain-to-Source Voltage (V)VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

451.843ID=5.2ATC=25oCNormalized RDS(ON)1.6ID=6AVG=4.5VRDS(ON) (mΩ)411.4391.2371.0350.83302468100.6-50050100150VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (C)o Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

2.01086IS(A)Tj=150oC4Tj=25oCNormalized VGS(th) (V)1.51.00.52000.20.40.60.811.20.0-50050100150VSD , Source-to-Drain Voltage (V)Tj , Junction Temperature (oC) Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

3/4

AP9T15GH/J

141000f=1.0MHz12ID=10AVDS=10VVDS=12VVDS=16VC (pF)100VGS , Gate to Source Voltage (V)Ciss1086CossCrss420024681012101591317212529QG , Total Gate Charge (nC)VDS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1001Normalized Thermal Response (Rthjc)Duty factor = 0.5100us100.2ID (A)1ms10ms100msDCTc=25oCSingle Pulse0.10.11101000.10.10.050.020.011PDMtTSingle PulseDuty Factor = t/TPeak Tj = PDM x Rthjc + TC0.010.000010.00010.0010.010.11VDS , Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS90%VGQG4.5VQGSQGD10%VGStd(on)trtd(off)tfChargeQFig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4/4