专利内容由知识产权出版社提供
专利名称：CMOS image sensor and method for
fabricating the same
发明人：Hwang Joon申请号：US11448428申请日：20060607
公开号：US20060273349A1公开日：20061207
专利附图：
摘要：A CMOS image sensor and a method of fabricating the same are provided. TheCMOS image sensor includes: an epitaxial layer of a first conductivity type, formed in asemiconductor substrate of the first conductivity type; a blue photodiode region of a
second conductivity type, formed in the epitaxial layer at a first depth; a greenphotodiode region of the second conductivity type, spaced apart from the bluephotodiode region and formed in the epitaxial layer at a second depth larger than thefirst depth; and a red photodiode region of the second conductivity type, spaced apartfrom the green photodiode region and formed in the epitaxial layer at a third depthlarger than the second depth.
申请人：Hwang Joon
地址：Cheongju-si KR
国籍：KR
更多信息请下载全文后查看
