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专利名称：Semiconductor integrated device发明人：Yuui Shimizu申请号：US14478315申请日：20140905公开号：US09583582B2公开日：20170228
专利附图：
摘要：According to one embodiment, a semiconductor integrated device includes afirst node that receives a first voltage, a second node that receives a second voltage, andan electrode. A PMOS transistor is coupled between the first node and the electrode. AnNMOS transistor is coupled between the second node and the electrode. A control signal
at a voltage lower than the second voltage is supplied to a gate electrode of the PMOStransistor. A control signal at a voltage higher than the first voltage is supplied to a gateelectrode of the NMOS transistor.
申请人：Kabushiki Kaisha Toshiba
地址：Minato-ku JP
国籍：JP
代理机构：Oblon, McClelland, Maier & Neustadt, L.L.P.
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