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专利名称：Methods of fabricating electronic devices
using direct copper plating
发明人：Hyungsuk Alexander Yoon,Fritz Redecker申请号：US11810287申请日：20070604公开号：US080581B2公开日：20111115
专利附图：
摘要：The present invention relates to methods and structures for the metallizationof semiconductor devices. One aspect of the present invention is a method of forming asemiconductor device having copper metallization. In one embodiment, the method
includes providing a patterned wafer having a diffusion barrier for copper; depositing acopperless seed layer on the diffusion barrier effective for electrochemical deposition ofgapfill copper. The seed layer is formed by a conformal deposition process and by anonconformal deposition process. The method further includes electroplating coppergapfill onto the seed layer. Another aspect of the invention includes electronic devicesmade using methods and structures according to embodiments of the present invention.
申请人：Hyungsuk Alexander Yoon,Fritz Redecker
地址：San Jose CA US,Fremont CA US
国籍：US,US
代理人：Larry Williams
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