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专利名称：Semiconductor switching device
发明人：Asano, Tetsuro,Hirai, Toshikazu,Sakakibara,
Mikito
申请号：EP02011497.1申请日：20020524公开号：EP1265283A2公开日：20021211
专利附图：
摘要：A semiconductor switching device includes two FETs (FET1, FET2) with differentdevice characteristics, a common input terminal (IN) and two output terminals (OUT-1,OUT-2). A signal transmitting FET (FET1) has a gate width (Wg) of 400 µm. A resistor (R1)
connecting a gate electrode (17) and a control terminal (Ctl-1) of the signal transmittingFET (FET1) is tightly configured to provide expanding space for the FET (FET1). Despitethe reduced size, the switching device can allow a maximum power of 22.5 dBm to passthrough because of the asymmetrical device design. The switching device operates atfrequencies of 2.4 GHz or higher without use of shunt FET.
申请人：Sanyo Electric Co., Ltd.
地址：5-5, Keihanhondori 2-chome Moriguchi-shi, Osaka-fu 570-8677 JP
国籍：JP
代理机构：Glawe, Delfs, Moll & Partner
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