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Power semiconductor component

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专利名称:Power semiconductor component发明人:Patrick Legros申请号:US08/127456申请日:19930927公开号:US05319237A公开日:19940607

摘要:A self-encapsulated power conductor component with improved heat transferhas a chip bearing at least one power transistor having at least one interdigitatedelectrode, provided with an air bridge, and a sink provided with at least one metal islet inrelief. The air bridge is reinforced and the chip is brazed in reverse to the islet of the sinkby its air bridge. Other islets brazed to the metallizations on the rim of the chip reinforcethe mechanical fixing. The access to the electrodes is obtained by via holes and thesecond face of the substrate may receive non-integrable components. The device can beapplied to power transistors and integrated circuits, notably on GaAs.

申请人:THOMSON COMPOSANTS MICROONDES

代理机构:Oblon, Spivak, McClelland, Maier & Neustadt

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