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专利名称：Method of and apparatus for determining
residual damage to wafer edges
发明人：Masumura, Hisashi,Kudo, Hideo,Sumie,
Shingo, c/o Kobe Corporate Res.Lab.,Tsunaki, Hidetoshi, c/o GenesisTechnology Inc.,Hirao, Yuji, c/o GenesisTechnology Inc.,Morioka, Noritaka, c/oGenesis Technology Inc.
申请号：EP96115586.8申请日：19960927公开号：EP0766298A2公开日：19970402
专利附图：
摘要：A semiconductor wafer edge portion is evaluated with high accuracy by acontact-free, non-destructive and high accuracy optical-acoustical process instead ofconventional destructive selective etching processes. Residual damages in the form ofcrystal damages caused to such wafer edges are determined by an optical acousticalprocess, in which a measurement probe (10A) is made to face each of three exciting laserbeam irradiation points (X1, X2, X3) on upper and lower inclined surfaces and an accurateend surface of the wafer edge (31), and the thermal response induced by an exciting laserbeam is determined by laser interference.
申请人：Shin-Etsu Handotai Co., Ltd.,KABUSHIKI KAISHA KOBE SEIKO SHO
地址：Toginbiru, 4-2, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP,3-18Wakinohama-cho, 1-Chome, Chuo-ku Kobe-Shi, Hyogo 651 JP
国籍：JP,JP
代理机构：Strehl Schübel-Hopf Groening & Partner
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