专利内容由知识产权出版社提供
专利名称：METHOD FOR FABRICATING AN
INTEGRATED-PASSIVES DEVICE WITH A MIMCAPACITOR AND A HIGH-ACCURACYRESISTOR ON TOP
发明人：Aarnoud Laurens Roest,Linda Van Leuken-Peters
申请号：US132816申请日：20100414
公开号：US20120045881A1公开日：20120223
专利附图：
摘要：The present invention relates to a method for fabricating an electroniccomponent, comprising fabricating, on a substrate () at least one integrated MIMcapacitor () having a top capacitor electrode () and a bottom capacitor electrode () at asmaller distance from the substrate than the top capacitor electrode; fabricating anelectrically insulating first cover layer () on the top capacitor electrode, which first coverlayer partly or fully covers the top capacitor electrode and is made of a lead-containingdielectric material; thinning the first cover layer; fabricating an electrically insulatingsecond cover layer () on the first cover layer, which second cover layer partly or fullycovers the first cover layer and has a dielectric permittivity smaller than that of the firstcover layer; and fabricating an electrically conductive resistor layer () on the second coverlayer, which resistor layer has a defined ohmic resistance.
申请人：Aarnoud Laurens Roest,Linda Van Leuken-Peters
地址：Geldrop NL,Maarheeze NL
国籍：NL,NL
更多信息请下载全文后查看
