UI(D)4N60
N-Ch 600V Fast Switching MOSFETs
General Description Product Summery
The UI(D)4N60 is the highest performance trench
P-ch MOSFETs with extreme high cell density , ID BVDSS RDS(ON)
which provide excellent RDSON and gate charge 600V2.25Ω3.2Afor most of the synchronous buck converter
applications . Applications The UI(D)4N60 meet the RoHS and Green Product
z High Frequency Point-of-Load Synchronous requirement , 100% EAS guaranteed with full
Buck Converter for MB/NB/UMPC/VGA function reliability approved.
z Networking DC-DC Power System
z Load Switch Features Advanced high cell density Trench technology TO-251/TO-252 Pin Configuration z zSuper Low Gate Charge
z Excellent CdV/dt effect decline
100% EAS Guaranteed z
Green Device Available z
Absolute Maximum Ratings
SymbolVDSSIDIDMVGSS EASdv/dt PD ParameterTO-251/TO-2526003.2 UnitesVAAAVmJV/nsWW/℃℃℃Drain-Source VoltageDrain Current –Continuous(TC= 25℃) –Continuous(TC= 100℃)1.9(Note1)(Note2)(Note3)12.8±30634.5570.45-55 to + 150300 Drain Current –PulsedGate-Source VoltageSingle Pulsed Avalanche EnergyPeak Diode Recovery dv/dtPower Dissipation (TC= 25℃)-Derate above 25℃
TJ1TSTGTLOperating and Storage Temperature RangeMaximum lead temperature for soldering purposes, 1/8”from case for 5 secondsThermal Data SymbolParameterThermal Resistance, Junction-to-CaseThermal Resistance, Junction-to-AmbientTyp----Max2.250Units℃/W℃/W
RθJCRθJA
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UI(D)4N60
N-Ch 600V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
ParameterTest ConditionsMinTypMaxUnits
Off CharacteristicsBVDSSΔBVDSS/ΔTJ Drain-Source Breakdown VoltageBreakdown Voltage Temperature Coefficient VGS= 0 V, ID= 250μAID= 250μA, Referenced to 25℃VDS= 600 V, VGS= 0 V(TC= 25℃)VDS= 480 V, VGS= 0 V(TC= 125℃)VGS= 30 V, VDS= 0 VVGS = -30 V, VDS= 0 V600---- ----0.6------------10100100-100VV/℃μAμAnAnAIDSSZero Gate Voltage Drain CurrentIGSSFIGSSRGate-Body ForwardGate-Body ReverseLeakage Leakage Current, Current, ----On CharacteristicsVGS(th)RDS(on)gFSGate Threshold VoltageStatic Drain-SourceOn-resistanceForward TransconductanceVDS= VGS, ID= 250 μAVGS= 10 V, ID= 1.6AVDS= 10 V, ID= 1.6A (Note 4)2.5----3.52.252..52.81--VΩSDynamic CharacteristicsCissCossCrssInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceVDS= 25 V, VGS= 0 V,f = 1.0 MHZ
------50053.27.0650699.1pFpFpF
Switching Characteristicstd(on)trtd(off)tfQgQgsQgdTurn-On Delay TimeTurn-On Rise TimeTurn-Off Delay TimeTurn-OffFallTimeTotal Gate ChargeGate-Source ChargeGate-Drain ChargeVDD= 300 V, ID= 3.2A,RG= 25Ω VDS= 480 V, ID= 3.2A,VGS= 10 V (Note 4, 5)
(Note 4, 5)--------------1120301914.53.47.02748724620----nsnsnsnsnCnCnCDrain-Source Diode Characteristics and Maximum RatingsISISMVSDtrrQrr
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward CurrentDrain-SourceDiode Forward VoltageReverse Recovery TimeVGS= 0 V, IS= 3.2AVGS= 0 V,IS= 3.2A, sdIF/dt = 100 A/μ (Note 4)Reverse Recovery Charge--------------1.135610.83.212.81.4----AAVnsμC
Notes: 1.Repetitive Rating：Pulse width limited by maximum junction temperature2.L = 10mH, IAS= 3.4A, VDD= 50V, RG=25Ω, Starting TJ= 25℃3.ISD≤ 3.2A, di/dt ≤ 200A/μS,VDD≤ BVDSS, Starting TJ= 25℃4.Pulse Test：Pulsewidth ≤300μS, Duty cycle ≤2%5. Essentiallyindependent of operating temperature
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UI(D)4N60
N-Ch 600V Fast Switching MOSFETs
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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UI(D)4N60
N-Ch 600V Fast Switching MOSFETs
Peak Diode Recovery dv/dt Test Circuit & Waveforms
