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TN2510Low Threshold
N-Channel Enhancement-ModeVertical DMOS FETs
Ordering Information
BVDSS /BVDGS100V
†
RDS(ON)(max)1.5Ω
VGS(th)(max)2.0V
ID(ON)(min)3.0A
Order Number / PackageTO-243AA*TN2510N8
Die†TN2510ND
* Same as SOT-. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
Product marking for TO-243AA:
Features
❏Low threshold —2.0V max.❏High input impedance
❏Low input capacitance — 125pF max.❏Fast switching speeds❏Low on resistance
❏Free from secondary breakdown❏Low input and output leakage
❏Complementary N- and P-channel devices
TN5A❋
Where ❋ = 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-tors utilize a vertical DMOS structure and Supertex's well-provensilicon-gate manufacturing process. This combination producesdevices with the power handling capabilities of bipolar transistorsand with the high input impedance and positive temperaturecoefficient inherent in MOS devices. Characteristic of all MOSstructures, these devices are free from thermal runaway andthermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide rangeof switching and amplifying applications where very low thresholdvoltage, high breakdown voltage, high input impedance, low inputcapacitance, and fast switching speeds are desired.
Applications
❏Logic level interfaces – ideal for TTL and CMOS❏Solid state relays❏Battery operated systems❏Photo voltaic drives❏Analog switches
❏General purpose line drivers❏Telecom switches
Package Option
DG D SAbsolute Maximum Ratings
Drain-to-Source VoltageDrain-to-Gate VoltageGate-to-Source Voltage
Operating and Storage TemperatureSoldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
BVDSSBVDGS± 20V
-55°C to +150°C
300°C
TO-243AA(SOT-)Note: See Package Outline section for dimensions.Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate \"products liabilityindemnification insurance agreement.\" Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due toworkmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to theSupertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.1
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TN2510
Thermal Characteristics
PackageTO-243AA
ID (continuous)*
0.73A
ID (pulsed)
5.0A
Power Dissipation@ TA = 25°C
1.6W†
θjc°C/W15
θja°C/W78†
IDR*0.73A
IDRM5.0A
* ID (continuous) is limited by max rated Tj.†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
SymbolBVDSSVGS(th)∆VGS(th)IGSSIDSS
Parameter
Drain-to-SourceBreakdown VoltageGate Threshold Voltage
Change in VGS(th) with TemperatureGate Body Leakage
Zero Gate Voltage Drain Current
Min1000.6
2.0-4.5100101.0
ID(ON)RDS(ON)
ON-State Drain CurrentStatic Drain-to-SourceON-State Resistance
1.23.0
2.06.0
15
1.51.0
∆RDS(ON)GFSCISSCOSSCRSStd(ON)trtd(OFF)tfVSDtrr
Change in RDS(ON) with TemperatureForward TransconductanceInput Capacitance
Common Source Output CapacitanceReverse Transfer CapacitanceTurn-ON Delay TimeRise Time
Turn-OFF Delay TimeFall Time
Diode Forward Voltage DropReverse Recovery Time
300
0.4
0.8703015
1257025101020101.8
Vns
VGS = 0V, ISD = 1.5AVGS = 0V, ISD = 1.5A
ns
VDD = 25V,ID = 1.5A,RGEN = 25Ω
pF
2.01.50.75
%/°CΩ
Typ
Max
UnitVVmV/°CnAµAmAA
Conditions
VGS = 0V, ID = 2mAVGS = VDS, ID= 1mAVGS = VDS, ID= 1.0mAVGS = ± 20V, VDS = 0VVGS = 0V, VDS = Max RatingVGS = 0V, VDS = 0.8 Max RatingTA = 125°C
VGS = 5.0V, VDS = 25VVGS = 10V, VDS = 25VVGS = 3.0V, ID = 250mAVGS = 4.5V, ID = 750mAVGS = 10V, ID = 750mAVGS = 10V, ID = 750mAVDS = 25V, ID = 1.0AVGS = 0V, VDS = 25Vf = 1 MHz
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V90%10%t(ON)INPUT0VPULSEGENERATORRgent(OFF)trtd(OFF)tF10%td(ON)VDD10%INPUTOUTPUT0V90%90%2
ΩVDDRLOUTPUTD.U.T.元器件交易网www.cecb2b.com
Typical Performance Curves
OutputCharacteristics108)se6VGS=10Vrepma8V(D4I6V24V03V01020304050VDS(volts)Transconductancevs.DrainCurrent2.0VDS=25V1.6)sn-55°Ce1.2TA=meis(SF0.8TA=25°CGTA=125°C0.40012345ID(amperes)MaximumRatedSafeOperatingArea10TO-243AA(pulsed))1.0TA=25°Cserepma(DI0.1TO-243AA(DC)0.011101001000VDS(volts)TN2510
SaturationCharacteristics108)s6VeGS=10Vrepma(48VDI6V24V03V0246810VDS(volts)PowerDissipationvs.AmbientTemperature2.0TO-243AA)sttaw1.0(DP00255075100125150TC(°C)ThermalResponseCharacteristics1.0)dezil0.8amron(e0.6cnatsTO-243AAise0.4PRTD==0.55WC25°Clamre0.2hT00.0010.010.1110tp(seconds)3
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TN2510
Typical Performance Curves
BVDSSVariation with Temperature1.110On-Resistance vs. Drain CurrentVGS= 5V8BVDSS(normalized)RDS(ON)(ohms)61.0VGS= 10V420.9-5005010015000246810Tj(°C)Transfer Characteristics101.2ID(amperes)V(th)andRDSVariation with Temperature2.0VGS= 25V8TA= -55°CRDS(ON) @ 5V, 0.75A1.1ID(amperes)V @ 1mA(th)1.6625°C41.01.2125°C20.90.80.800246810-500501001500.4 VGS(volts)Capacitance vs. Drain-to-Source Voltage10010Tj(°C)Gate Drive Dynamic Characteristicsf = 1MHzCISS8VDS= 10V75C (picofarads)VGS(volts)650VDS= 40V4190 pFCOSS252CRSS00102030400070pF0.51.01.52.02.5VDS(volts)QG(nanocoulombs)11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 940TEL: (408) 744-0100 • FAX: (408) 222-45
www.supertex.com
RDS(ON)(normalized)VGS(th)(normalized)
