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STP6NB50STP6NB50FP
N-CHANNELENHANCEMENTMODE
PowerMESH™MOSFET
TYPESTP6NB50STP6NB50FP
sssss
VDSS500V500V
RDS(on)<1.5Ω<1.5Ω
ID5.8A3.4A
TYPICALRDS(on)=1.35Ω
EXTREMELYHIGHdv/dtCAPABILITY100%AVALANCHETESTED
VERYLOWINTRINSICCAPACITANCESGATECHARGEMINIMIZED
123
123
DESCRIPTION
UsingthelatesthighvoltageMESHOVERLAY™process,SGS-ThomsonhasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)perarea,exceptionalavalancheanddv/dtcapabilitiesandunrivalledgatechargeandswitchingcharacteristics.
APPLICATIONSsHIGHCURRENT,HIGHSPEEDSWITCHINGsSWITCHMODEPOWERSUPPLIES(SMPS)sDC-ACCONVERTERSFORWELDINGEQUIPMENTANDUNINTERRUPTIBLEPOWERSUPPLIESANDMOTORDRIVEABSOLUTEMAXIMUMRATINGS
SymbolVDSVDGRVGSIDIDIDM(•)Ptotdv/dt(1)VISOTstgTj
March1998
Parameter
Drain-sourceVoltage(VGS=0)Drain-gateVoltage(RGS=20kΩ)Gate-sourceVoltage
DrainCurrent(continuous)atTc=25CDrainCurrent(continuous)atTc=100CDrainCurrent(pulsed)
TotalDissipationatTc=25oCDeratingFactor
PeakDiodeRecoveryvoltageslopeInsulationWithstandVoltage(DC)StorageTemperature
Max.OperatingJunctionTemperature
oo
TO-220TO-220FP
INTERNALSCHEMATICDIAGRAM
Value
STP6NB50
STP6NB50FP500500±30
5.83.723.21000.84.5---65to150
150
(1)ISD≤6A,di/dt≤200A/µs,VDD≤V(BR)DSS,Tj≤TJMAX
UnitVVV
3.42.123.2350.284.52000
AAAWW/CV/ns
oooo
CCC1/9
(•)Pulsewidthlimitedbysafeoperatingarea
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STP6NB50/FP
THERMALDATA
TO-220
Rthj-caseRthj-ambRthc-sink
Tl
ThermalResistanceJunction-case
Max
1.25
62.50.5300
ThermalResistanceJunction-ambientMaxThermalResistanceCase-sinkTypMaximumLeadTemperatureForSolderingPurpose
TO-220FP3.57
ooo
C/WC/WC/WoC
AVALANCHECHARACTERISTICS
SymbolIAREAS
Parameter
AvalancheCurrent,RepetitiveorNot-Repetitive(pulsewidthlimitedbyTjmax,δ <1%)SinglePulseAvalancheEnergy
o
(startingTj=25C,ID=IAR,VDD=50V)
MaxValue
5.8290
UnitAmJ
ELECTRICALCHARACTERISTICS(Tcase=25oCunlessotherwisespecified)OFF
SymbolV(BR)DSSIDSSIGSS
Parameter
Drain-source
BreakdownVoltage
TestConditions
ID=250µA
VGS=0
Min.500
150±100
Typ.
Max.
UnitVµAµAnA
ZeroGateVoltageVDS=MaxRatingDrainCurrent(VGS=0)VDS=MaxRatingGate-bodyLeakageCurrent(VDS=0)
VGS=± 30V
Tc=125C
o
ON(∗)
SymbolVGS(th)RDS(on)ID(on)
Parameter
GateThresholdVoltage
VDS=VGS
TestConditionsID=250µAID=2.9A
5.8Min.3
Typ.41.35
Max.51.5
UnitVΩA
StaticDrain-sourceOnVGS=10VResistance
OnStateDrainCurrentVDS>ID(on)xRDS(on)max
VGS=10V
DYNAMIC
Symbolgfs(∗)CissCossCrss
Parameter
Forward
TransconductanceInputCapacitanceOutputCapacitanceReverseTransferCapacitance
TestConditions
VDS>ID(on)xRDS(on)maxVDS=25V
f=1MHz
ID=2.9AVGS=0
Min.2.5
Typ.468011012
88414916Max.
UnitSpFpFpF
2/9
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STP6NB50/FP
ELECTRICALCHARACTERISTICS(continued)SWITCHINGON
Symboltd(on)trQgQgsQgd
Parameter
Turn-onTimeRiseTime
TotalGateChargeGate-SourceChargeGate-DrainCharge
TestConditions
VDD=250VID=2.9A
VGS=10VRG=4.7 Ω
(seetestcircuit,figure3)VDD=400V
ID=5.8AVGS=10V
Min.
Typ.11.58217.28
Max.161230
UnitnsnsnCnCnC
SWITCHINGOFF
Symboltr(Voff)tftc
Parameter
Off-voltageRiseTimeFallTime
Cross-overTime
TestConditions
VDD=400VID=5.8ARG=4.7 ΩVGS=10V(seetestcircuit,figure5)
Min.
Typ.7515
Max.121023
Unitnsnsns
SOURCEDRAINDIODE
SymbolISDISDM(•)VSD(∗)trrQrrIRRM
Parameter
Source-drainCurrentSource-drainCurrent(pulsed)
ForwardOnVoltageReverseRecoveryTime
ReverseRecoveryCharge
ReverseRecoveryCurrent
ISD=5.8A
VGS=0
4353.315
ISD=5.8Adi/dt=100A/µs
o
Tj=150CVDD=100V
(seetestcircuit,figure5)
TestConditions
Min.
Typ.
Max.5.823.21.6
UnitAAVnsµCA
(∗)Pulsed:Pulseduration=300µs,dutycycle1.5%(•)Pulsewidthlimitedbysafeoperatingarea
SafeOperatingAreaforTO-220SafeOperatingAreaforTO-220FP
3/9
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STP6NB50/FP
ThermalImpedanceforTO-220
ThermalImpedanceforTO-220FP
OutputCharacteristicsTransferCharacteristics
TransconductanceStaticDrain-sourceOnResistance
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STP6NB50/FP
GateChargevsGate-sourceVoltage
CapacitanceVariations
NormalizedGateThresholdVoltagevsTemperature
NormalizedOnResistancevsTemperature
Source-drainDiodeForwardCharacteristics
5/9
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STP6NB50/FP
Fig.1:UnclampedInductiveLoadTestCircuit
Fig.2:UnclampedInductiveWaveform
Fig.3:SwitchingTimesTestCircuitsForResistiveLoad
Fig.4:GateChargetestCircuit
Fig.5:TestCircuitForInductiveLoadSwitchingAndDiodeRecoveryTimes
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STP6NB50/FP
TO-220MECHANICALDATA
DIM.ACDD1EFF1F2GG1H2L2L4L5L6L7L9DIA.
13.02.6515.256.23.53.750.490.611.141.144.952.410.0
16.4
14.02.9515.756.63.933.85
0.5110.1040.6000.2440.1370.147
Emm
MIN.4.401.232.40
1.27
0.700.881.701.705.152.710.40
0.0190.0240.0440.0440.1940.0940.393
TYP.
MAX.4.601.322.72
MIN.0.1730.0480.094
inchTYP.
MAX.0.1810.0510.107
0.050
0.0270.0340.0670.0670.2030.1060.409
0.5
0.5510.1160.6200.2600.1540.151
ACD1L2
F1DG1Dia.
F2FL5
L7
L6
L9
L4
GH2P011C
7/9
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STP6NB50/FP
TO-220FPMECHANICALDATA
DIM.
MIN.
ABDEFF1F2GG1HL2L3L4L6L7Ø
28.69.815.9934.42.52.50.450.751.151.154.952.410
16
30.610.616.49.33.2
1.1260.3850.6260.3540.118
mmTYP.
MAX.4.62.72.750.711.71.75.22.710.4
MIN.0.1730.0980.0980.0170.0300.0450.0450.1950.0940.393
0.630
1.2040.4170.50.3660.126
inchTYP.
MAX.0.1810.1060.1080.0270.0390.0670.0670.2040.1060.409
ABL3
L6
L7
F1¯
FDG1EHF2123
L2
L4
8/9
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STP6NB50/FP
Informationfurnishedisbelievedtobeaccurateandreliable.However,SGS-THOMSONMicroelectronicsassumesnoresponsabilityfortheconsequencesofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultsfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentorpatentrightsofSGS-THOMSONMicroelectronics.Specificationsmentionedinthispublicationaresubjecttochangewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.
SGS-THOMSONMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenapprovalofSGS-THOMSONMicroelectonics.
©1998SGS-THOMSONMicroelectronics-PrintedinItaly-AllRightsReserved
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