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专利名称：Cascading diode switches发明人：Martin J. Reid申请号：US06/229975申请日：19810130公开号：US04348651A公开日：19820907
摘要：An N or N.sup.+ type semiconductor substrate has a P-type layer diffusedtherein to form a PIN junction that is etched out between adjacent mesas and filled inwith glass to form adjacent diodes between top and bottom surfaces of the substrate.The bottom surface is metallized. The top surface carries a conducting layer
interconnecting the adjacent P-type portions of the mesas. This conducting layer has endportions connected to a respective diode of end width and length joined by an
intermediate portion of intermediate width and length. The end width and length is lessthan that of the intermediate width and length, respectively, so that the end portionspresent an inductive reactance at microwave frequencies between a respective diode andthe intermediate portion, and the intermediate portion forms a transmission line with theconducting layer on the bottom surface having a characteristic impedance of 50 ohmswhile that of the transmission lines formed by each end portion and the conducting layeron the bottom surface is substantially 100 ohms.
申请人：ALPHA INDUSTRIES, INC.
代理人：Charles Hieken
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