XD1001资料

18.0-50.0 GHz GaAs MMICDistributed AmplifierMay 2005 - Rev 01-May-05D1001Chip Device LayoutFeaturesUltra Wide Band Driver AmplifierFiber Optic Modulator Driver17.0 dB Small Signal Gain5.0 dB Noise Figure30 dB Gain Control+15.0 dBm P1dB Compression Point100% On-Wafer RF, DC and Output Power Testing100% Visual Inspection to MIL-STD-883Method 2010General DescriptionMimix Broadband’s 18.0-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a +15 dBm P1dB compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications.Absolute Maximum RatingsSupply Voltage (Vd)Supply Current (Id)Gate Bias Voltage (Vg)Input Power (Pin)Storage Temperature (Tstg)Operating Temperature (Ta)Channel Temperature (Tch)+6.0 VDC220 mA+0.3 VDC+15 dBm-65 to +165 OC-55 to MTTF Table2MTTF Table2(2) Channel temperature affects a device's MTTF. It isrecommended to keep channel temperature as low aspossible for maximum life.Electrical Characteristics (Ambient Temperature T = 25 oC)ParameterFrequency Range (f)Input Return Loss (S11)Output Return Loss (S22)Small Signal Gain (S21)Gain Flatness (∆S21)Gain ControlReverse Isolation (S12)Noise Figure (NF)Output Power for 1 dB Compression (P1dB)1Output Third Order Intercept Point (OIP3)1Drain Bias Voltage (Vd)Gain Control Bias (Vg)Supply Current (Id) (Vd=5.0V, Vg=0.0 Typical)(1) Measured using constant current.UnitsGHzdBdBdBdBdBdBdBdBmdBmVDCVDCmAMin.18.0-----------2.0-Typ.-10.011.017.0+/-1.030.040.05.0+15.0+24.0+5.00.0160Max.50.0---------+5.5+.01190Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.comPage 1 of 6Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.元器件交易网www.cecb2b.com

18.0-50.0 GHz GaAs MMICDistributed AmplifierMay 2005 - Rev 01-May-05D1001Distributed Amplifier Measurements2221Reverse Isolation (dB)XD1001 Vd=5.0 V Id=150 mA~140 Devices0-10-20-30-40-50-60-7018.020.022.024.026.0XD1001 Vd=5.0 V Id=150 mA~140 Devices20 Gain (dB)191817161514131218.020.022.024.026.028.030.032.034.036.0Mean38.040.042.044.046.048.050.028.030.032.034.036.0Mean38.040.042.044.046.048.050.0Frequency (GHz)MaxMedian-3sigmaMaxFrequency (GHz)Median-3sigma0Input Return Loss (dB)XD1001 Vd=5.0 V Id=150 mA~140 DevicesOutput Return Loss (dB)0-5-10-15-20-25-30-3518.020.022.024.026.0XD1001 Vd=5.0 V Id=150 mA~140 Devices-5-10-15-2018.020.022.024.026.028.030.032.034.036.0Mean38.040.042.044.046.048.050.028.030.032.034.036.0Mean38.040.042.044.046.048.050.0Frequency (GHz)MaxMedian-3sigmaMaxFrequency (GHz)Median-3sigma6.05.55.04.54.03.53.02.52.01.51.018.019.020.021.0XD1001 Vd=5.0 V Id=150 mA~35 DevicesOutput Power P1dB (dBm)201918171615141312111018.020.022.024.026.0XD1001 Vd=5.0 V Id=150 mA~35 DevicesNoise Figure (dB)22.0Max23.024.0Median25.0Mean26.0Min27.028.029.030.0Frequency (GHz)28.030.032.034.036.0Mean38.040.042.044.046.048.050.0Frequency (GHz)MaxMedian-3sigmaMimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.comPage 2 of 6Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.元器件交易网www.cecb2b.com

18.0-50.0 GHz GaAs MMICDistributed AmplifierMay 2005 - Rev 01-May-05D1001Distributed Amplifier Measurements (cont.)30DA0445_0-75GHz_SparametersS21WP340 0445 Attenuation vs Vg for 36 to 41 GHz36.01337.01238.01139.0140.00941.008403836343230201816141210820-2-4-6-8-10-12-14-16-18-20-22-24-26-28-300510S22Attenuation (dB)282624222018161412108S1115202530354045Frequency (GHz)50556065707520-2-1.8-1.6-1.4-1.2-1Vg (V)-0.8-0.6-0.4-0.200.2 0445_5samples: OIP3 avg (dBm) vs. freq (GHz)Pin = -15dBm per Tone, Vg = -0.3 to 0V, Vd = 5V3025, Vg1 (V)=-0.3, DeviceCoord=R1C1 , Vg1 (V)=-0.3, DeviceCoord=R1C4 , Vg1 (V)=-0.3, DeviceCoord=R2C2 , Vg1 (V)=-0.3, DeviceCoord=R3C3 , Vg1 (V)=-0.3, DeviceCoord=R4C1 , Vg1 (V)=-0.2, DeviceCoord=R1C1 , Vg1 (V)=-0.2, DeviceCoord=R1C4 , Vg1 (V)=-0.2, DeviceCoord=R2C2 , Vg1 (V)=-0.2, DeviceCoord=R3C3 , Vg1 (V)=-0.2, DeviceCoord=R4C1 , Vg1 (V)=-0.1, DeviceCoord=R1C1 , Vg1 (V)=-0.1, DeviceCoord=R1C4 , Vg1 (V)=-0.1, DeviceCoord=R2C2 , Vg1 (V)=-0.1, DeviceCoord=R3C3 , Vg1 (V)=-0.1, DeviceCoord=R4C1 20OIP3 avg (dBm)1510, Vg1 (V)=0, DeviceCoord=R1C1 , Vg1 (V)=0, DeviceCoord=R1C4 , Vg1 (V)=0, DeviceCoord=R2C2 , Vg1 (V)=0, DeviceCoord=R3C3 , Vg1 (V)=0, DeviceCoord=R4C1 50182022242628freq (GHz)3032343638 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.comPage 3 of 6Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.元器件交易网www.cecb2b.com

18.0-50.0 GHz GaAs MMICDistributed AmplifierMay 2005 - Rev 01-May-05D10010.396(0.016)Mechanical Drawing1.300(0.051)230.922(0.036)0.379(0.015)0.0140.01.555(0.061)(Note: Engineering designator is 30DA0445)1.950(0.077)Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: GoldAll DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.572 mg.Bond Pad #1 (RF In)Bond Pad #2 (Vd)Bond Pad #3 (RF Out)Bond Pad #4 (Vg)Bypass Capacitors - See App Note [2]VdBias Arrangement2Vd3RF OutRF OutRF InRF In14VgVgMimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.comPage 4 of 6Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.元器件交易网www.cecb2b.com

18.0-50.0 GHz GaAs MMICDistributed AmplifierMay 2005 - Rev 01-May-05D1001App Note [1] Biasing - As shown in the bonding diagram, this device is operated with a single drain and a gain controlvoltage. Maximum gain bias is nominally Vd=5.0V, Vg=0V, Id=160mA. Gain can be adjusted by changing Vg. It isrecommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives themost reproducible results. Depending on the supply voltage available and the power dissipation constraints, the biascircuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drainsupply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drainvoltage. The typical gate voltage needed to do this is 0.0V. Typically the gate is protected with Silicon diodes to limit theapplied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available beforeapplying the positive drain supply.App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200 pF) asclose to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.MTTF Table (TBD)These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.BackplateTemperature55 deg Celsius75 deg Celsius95 deg CelsiusChannelTemperaturedeg Celsiusdeg Celsiusdeg CelsiusRthC/WC/WC/WMTTF HoursE+E+E+FITsE+E+E+Bias Conditions: Vd=5.0V, Id=160 mADevice SchematicMimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.comPage 5 of 6Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.元器件交易网www.cecb2b.com

18.0-50.0 GHz GaAs MMICDistributed Amplifier

May 2005 - Rev 01-May-05D1001Handling and Assembly Information

CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to thehuman body and the environment. For safety, observe the following procedures:

Do not ingest.

Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemicalprocessing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.Observe government laws and company regulations when discarding this product. This product must bediscarded in accordance with methods specified by applicable hazardous waste procedures.

Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life supportdevices or systems without the express written approval of the President and General Counsel of Mimix

Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended forsurgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used inaccordance with instructions for use provided in the labeling, can be reasonably expected to result in a

significant injury to the user. (2) A critical component is any component of a life support device or system whosefailure to perform can be reasonably expected to cause the failure of the life support device or system, or toaffect its safety or effectiveness.

ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are suppliedin antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,sharp tweezers.

Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004\") thick and have vias through to thebackside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die aspossible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies areAblestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxysparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the totaldie periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heatedcollet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphereis recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold+Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these-extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid

excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.

Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding tothe die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003\" x

0.0005\") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm(0.001\") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be

avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providingthe ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.

Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as shortas possible.

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Page 6 of 6Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.